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Recently, the team of Professor Xie Yi of the University of Science and Technology of China, Professor Prof. Wu Changzheng teamed up with Prof. Zeng Xiaocheng and the Research Group of the Strong Magnetic Field Science Center of the Chinese Academy of Sciences to realize the spin and band structure of two-dimensional nanomaterials through an anionic solid solution technology. Regulatory control has achieved the highest negative magnetoresistance effect in current two-dimensional nanomaterials. The discovery of this phenomenon has the potential to advance the development of two-dimensional materials in spintronic devices. The results were published on the October 6th Physical Review Letters.
Giant magnetoresistive materials based on the control of the degree of spin of electrons can realize high-density information storage and high-speed reading and writing, which is the core of the entire information industry. With the increasing demand for high integration and miniaturization of electronic devices, achieving magneto-resistive effects at smaller material scales has become a goal of pursuit. Two-dimensional nanomaterials represented by graphene have unique features and excellent physical properties, which provide an important material basis for nano spintronic devices. Therefore, the intrinsic regulation and magnetoresistance effects of spin in two-dimensional nanomaterials are the focus of research in this field in recent years.
Since the vast majority of two-dimensional materials are intrinsically non-magnetic, the introduction of intrinsic net magnetic moments in two-dimensional materials has become the key to the development of two-dimensional spintronic devices. Prof. Wu Changzheng and Prof. Guo Yuqiao and Dr. Dai Jun of the research group proposed a new anion doping method for low-valent halogen-substituted chalcogens, which overcomes the difficulty of exfoliation by forming cation-doped intercalation compounds in two dimensions. The intrinsic spin and the modulating energy band structure have been successfully introduced in nanomaterials, and spin-dependent scattering electron transport has been realized. Giant magnetoresistive devices based on two-dimensional transition metal chalcogenides have been constructed.
This experimental result achieved the largest intrinsic negative magnetoresistance effect of the two-dimensional nanomaterial system so far, with -85% (10K, 5T). Reviewers believe that the work has created a very significant area of ​​research.
The above research was supported by the National Fund Committee, the Ministry of Science and Technology, the Chinese Academy of Sciences, and the Collaborative Innovation Center for Energy and Materials Chemistry.
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