Hefei Research Institute Makes New Progress in the Research of Strongly Associated Electronic Materials

Hefei Research Institute Makes New Progress in the Research of Strongly Associated Electronic Materials

(a) Planar Hall effect at different magnetic field angles; (b) Schematic diagram of Hall planar measurement structure; (c) Planar magnetic anisotropy diagram.

Recently, Tian Liangming's research group at the Strong Magnetic Field Science Center of the Chinese Academy of Sciences' Institute of Materials Science has made new progress in the study of the planar magnetic structure of the strongly correlated electronic material Sr4Ru3O10. Related research was published in Applied Physics Letters.

The perovskite strontium oxide Srn+1RunO3n+1 (n=1, 2, ∞) contains abundant physical phenomena, including p-wave superconductivity (Sr2RuO4) and magnetic field-induced quantum critical phenomena (Sr3Ru2O7). Concentrated physicists' research interests. Sr4Ru3O10 is a representative material in the Srn+1 RunO3n+1 system and is a strongly anisotropic ferromagnetic material with a ferromagnetic transition temperature of TC=105 K and a magnetic moment mainly along the c direction. Previous work has focused on the study of the anisotropic magnetic behavior and transitional magnetic properties of bulk materials. Little is known about the magnetic properties of Sr4Ru3O10 at nanoscale. Recently, under the specific guidance of associate researcher Yang Jiyong, Liu Yan, a doctoral student of the research group, first advanced the thickness of Sr4Ru3O10 single crystals to the nanometer scale through mechanical dissociation methods, and studied the magnetic reluctance characteristics of Sr4Ru3O10 nanosheets through transport measurements. New J. Phys. 18, 053019 (2016), Phys. Rev. B 95, 161103(R)(2017)). It was found that the ferromagnetic sequence exists in the ab-plane of the Sr4Ru3O10 nanosheets, which is completely different from the result that the ab-plane of the bulk material is paramagnetic or antiferromagnetic.

Based on this, the research group further studied the in-plane magnetic anisotropy in the Sr4Ru3O10 nanosheets through the system's rotation Hall effect measurement. The experimental results show that the plane Hall signal in the Sr4Ru3O10 nanosheet is related to the direction of the magnetic field. Only when the magnetic field is along the I (or III) quadrant, the planar Hall signal will appear discontinuous jump similar to the behavior of the “spin valve”. Change, and when the magnetic field is along the II (or IV) quadrant, there is no such hopping signal. The reason for this phenomenon is that the in-plane magnetic moment in the nanoflakes takes a 90° turn when the magnetic field is in the I (or III) quadrant, and it occurs when the magnetic field is in the II (or IV) quadrant. The 180° flip. These results clearly show that in the Sr4Ru3O10 nanosheet, not only the ferromagnetic sequence is present in the ab-plane, but also the easy magnetization direction of the ferromagnetic sequence is along the [-110] direction. This provides a new idea for understanding the strange magnetic properties in Sr4Ru3O10.

The single crystal used in this work was provided by Cao Gang, a professor at the University of Colorado. During the project implementation process, it was supported by the National Natural Science Foundation of China, the International Innovation Team, and the Hefei University Science Center.

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