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The use of DNA in nanodevices is largely directed at the manipulation of DNA as semiconductors, but what if we can create an inorganic semiconductor with DNA properties? Researchers at the Technical University of Munich, Germany, have discovered a double helix structure of inorganic semiconductor materials. This material consists of tin (Sn), iodine (I) and (P) elements, chemical name SnIP. The research report was published in the "Advanced Materials" journal.
Thanks to the double-helical structure, one of the differences between SnIP and other semiconductor materials is that it has extreme flexibility. Munich Institute of Technology professor Tom Nilges said that the preparation of SnIP is simple and its constituent elements are extremely rich and do not contain any toxic components. Its potential applications include flexible semiconductor devices, solar cells, and more.
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